Basics of magnetism, spintronics and MRAM technology
for students, researchers and engineers.
No background in magnetism required.
Material growth
Theory
Technology
Characterization
Design
Benchmarking Market
Objectives
REGISTRATION IS OPEN at https://www.inmram.com/registration_2022.html
This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of non-volatile memory called MRAM (Magnetic Random Access Memory) based on magnetic tunnel junctions. MRAM and particularly Spin-Transfer-Torque and Spin-Orbit-Torque MRAM (STT & SOT MRAM) memory are attracting an increasing interest in microelectronics industry. In the past years, numerous announcements from major microelectronics companies have been made about volume production of embedded STT-MRAM based products.
The courses will be organized during 3 days. They will cover various aspects of MRAM technology: basic spintronics phenomena involved in MRAM, materials, various categories of MRAM (pros/cons, performances, degree of maturity, R&D trends). They will address a comparison with other technologies of non-volatile memories (Ferroelectric, Phase Change RAM and Resistive RAM) in terms of working principle, performance, applications and markets. The perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology, as well as emerging applications to unconventional computing, ultrafast all optical switching, skyrmions and domain walls will also be presented.
The course language will be English. This will be the seventh edition of InMRAM. The first five editions were held as on-site courses with an average of 80 attendees and in the 2021 edition with 130 participants from all over the world, with academic laboratory or company backgrounds. The online edition aims at expanding the InMRAM course audience. At the beginning of the course, each attendee will have the opportunity to follow introductory tutorials on magnetism (no background in magnetism required) and on microelectronics (no background in microelectronics required). More details can be found on the InMRAM website: www.InMRAM.com
Registration is now open until the 11th of November 2022 at the following link also accessible via the InMRAM website : https://www.inmram.com/registration_2022.html
Speakers of the InMRAM 2022 session
Jean Philippe ATTANE,
SPINTEC,
Grenoble, France
Hélène BEA,
SPINTEC,
Grenoble, FRANCE
Kerem CAMSARI
UC Santa Barbara,
California, USA
Bernard DIENY
SPINTEC, Grenoble, France
Kevin GARELLO
SPINTEC, Grenoble, France
Henri JAFFRES
CNRS/Thales, Univ. Paris-Saclay, Palaiseau, France
Stéphane MANGIN
Institut Jean Lamour, Nancy,
FRANCE
Lucian PREJBEANU
SPINTEC, Grenoble, France
Guillaume PRENAT
SPINTEC, Grenoble, France
Damien QUERLIOZ
C2N, Université Paris-Saclay, Palaiseau – FRANCE
Tiffany SANTOS
Western Digital,
San Jose, USA
Ricardo SOUSA
SPINTEC, Grenoble, France
Laurent VILA
SPINTEC, Grenoble, France
R. Sousa (Chair)
B. Dieny
K. Garello
L. Buda-Prejbeanu
P. Sabon
L. Prejbeanu