Introductory course on 

Magnetic Random Access Memory

21 to 23 November 2022

7th edition

Objectives
  • Program
  • Speakers
  • Registration
  • Previous Sessions
  • Events

Basics of magnetism, spintronics and MRAM technology

for students, researchers and engineers.

No background in magnetism required.

Material growth

Theory

Technology

Characterization

Design

Benchmarking Market

Objectives

REGISTRATION IS OPEN  at  https://www.inmram.com/registration_2022.html

 

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of non-volatile memory called MRAM (Magnetic Random Access Memory) based on magnetic tunnel junctions. MRAM and particularly Spin-Transfer-Torque and Spin-Orbit-Torque MRAM (STT & SOT MRAM) memory are attracting an increasing interest in microelectronics industry. In the past years, numerous announcements from major microelectronics companies have been made about volume production of embedded STT-MRAM based products.

 

The courses will be organized during 3 days. They will cover various aspects of MRAM technology:  basic spintronics phenomena involved in MRAM, materials, various categories of MRAM (pros/cons, performances, degree of maturity, R&D trends). They will address a comparison with other technologies of non-volatile memories (Ferroelectric, Phase Change RAM and Resistive RAM) in terms of working principle, performance, applications and markets. The perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology, as well as emerging applications to unconventional computing, ultrafast all optical switching, skyrmions and domain walls will also be presented. 

 

The course language will be English. This will be the seventh edition of InMRAM. The first five editions were held as on-site courses with an average of 80 attendees and in the 2021 edition with 130 participants from all over the world, with academic laboratory or company backgrounds. The online edition aims at expanding the InMRAM course audience. At the beginning of the course, each attendee will have the opportunity to follow introductory tutorials on magnetism (no background in magnetism required) and on microelectronics (no background in microelectronics required). More details can be found on the InMRAM website: www.InMRAM.com

 

Registration is now open until the 11th of November 2022 at the following link also accessible via the InMRAM website : https://www.inmram.com/registration_2022.html

 

 

Speakers of the InMRAM 2022 session

Jean Philippe ATTANE
Grenoble Alpes University, Grenoble, France

Jean Philippe ATTANE,

SPINTEC,

Grenoble, France

Hélène BEA, SPINTEC, Grenoble, FRANCE

Hélène BEA,

SPINTEC,

Grenoble, FRANCE

Kerem CAMSARI, UC Santa Barbara, California, USA

Kerem CAMSARI

UC Santa Barbara,

California, USA

Bernard DIENY
SPINTEC, Université Grenoble Alpes/CEA/CNRS, Grenoble, France

Bernard DIENY

SPINTEC, Grenoble, France

Mathias KLAUI
University of Mainz,
Institute of Physics, Mainz, Germany

Kevin GARELLO

SPINTEC, Grenoble, France

Mathias KLAUI
University of Mainz,
Institute of Physics, Mainz, Germany

Henri JAFFRES

CNRS/Thales, Univ. Paris-Saclay, Palaiseau, France

Stéphane MANGIN, Institut Jean Lamour, Nancy, FRANCE

Stéphane MANGIN

Institut Jean Lamour, Nancy,

FRANCE

Lucian PREJBEANU
SPINTEC, Université Grenoble Alpes/CEA/CNRS, Grenoble, France

Lucian PREJBEANU

SPINTEC, Grenoble, France

Guillaume PRENAT
SPINTEC, CEA/CNRS/UJF/Grenoble-Université, Grenoble, France

Guillaume PRENAT

SPINTEC, Grenoble, France

Laurent Grenouillet
CEA/LETI, MINATEC, Grenoble, France

Damien QUERLIOZ

C2N, Université Paris-Saclay, Palaiseau – FRANCE

Tiffany SANTOS, Western Digital, San Jose, USA

Tiffany SANTOS

Western Digital,

San Jose, USA

Nicolas LOCATELLI
Institut d’Electronique Fondamentale, Orsay, France

Ricardo SOUSA

SPINTEC, Grenoble, France

Laurent VILA

SPINTEC, Grenoble, France


Objectives

Previous Sessions

 

26,09

R. Sousa (Chair)

B. Dieny 

K. Garello

L. Buda-Prejbeanu

P. Sabon

L. Prejbeanu