InMRAM - InMRAM - October 2021

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memories called MRAMs (Magnetic Random Access Memories) based on magnetic tunnel junctions. These MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) memories are attracting an increasing interest in microelectronics industry. In the past four years, numerous announcements from major microelectronics companies have been made about the forthcoming volume production on MRAM based products. The courses will be organized during two and a half days. They will cover various aspects of MRAM technology: the basic spintronics phenomena involved in MRAM, the materials, the various categories of MRAM (pros/cons, performances, degree of maturity), comparison with other technologies of non-volatile memories (Phase Change RAM and Resistive RAM) in terms of working principle, performances, foreseen applications, the fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology. The course language will be English. This will be the 6th edition of InMRAM. The five first editions were quite successful with an average of 80 attendees from all over the world and coming from both academic laboratories and companies. At the beginning of the course, each attendee will have the choice between two introductory tutorials (6nd July morning): one on magnetism (for attendees having no or little background in magnetism) and one on microelectronics (for those having no or little background in microelectronics). On the afternoon of the 3rd day (July 8th), each attendee will have the opportunity to either visit SPINTEC or attend a training on tools for the design of hybrid CMOS/magnetic circuits. More details can be found on the InMRAM website : www.InMRAM.com

Registration will be opened between 3rd April 2020 and 3rd June 2020